Process for forming a semiconductor device including a capacitor

A capacitor for a semiconductor device is formed by selectively processing a portion of a layer (41, 113) to form an electrode (411, 81, 101, 111) for the capacitor. The selective processing includes selective doping, selective silicidation, selective oxidation, or the like. Contacts can be made to the electrode (411) with a reduced likelihood of the contact electrically shorting the electrodes of the capacitor together. When forming contact openings, misalignment tolerance is increased.