Method for stripping photoresist employing a hot hydrogen atmosphere

It has been discovered that organic photoresists may be quickly, conveniently, and completely stripped using a hot hydrogen atmosphere. The substrates are preferably exposed to such atmosphere utilizing a hydrogen conveyor furnace. The gases from the furnace are burned to carbon dioxide and water th...

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Hauptverfasser: LUTSIC, REBECCA CHRISTINE, MURRAY, JAMES RICHARD, SISSENSTEIN, JR., DAVID WILLIAM
Format: Patent
Sprache:eng
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Zusammenfassung:It has been discovered that organic photoresists may be quickly, conveniently, and completely stripped using a hot hydrogen atmosphere. The substrates are preferably exposed to such atmosphere utilizing a hydrogen conveyor furnace. The gases from the furnace are burned to carbon dioxide and water thereby eliminating the need to dispose of a stripping agent.