Process for producing surface micromechanical structures

PCT No. PCT/DE94/00538 Sec. 371 Date Nov. 27, 1995 Sec. 102(e) Date Nov. 27, 1995 PCT Filed May 11, 1994 PCT Pub. No. WO94/28426 PCT Pub. Date Dec. 8, 1994A method for fabricating surface-micromechanical structures wherein a sacrificial layer, in particular of silicon oxide, is deposited on a silico...

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Hauptverfasser:	OFFENBERG, MICHAEL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MEASURING MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK METALLURGY MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PERFORMING OPERATIONS PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TESTING TRANSPORTING
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Zusammenfassung:	PCT No. PCT/DE94/00538 Sec. 371 Date Nov. 27, 1995 Sec. 102(e) Date Nov. 27, 1995 PCT Filed May 11, 1994 PCT Pub. No. WO94/28426 PCT Pub. Date Dec. 8, 1994A method for fabricating surface-micromechanical structures wherein a sacrificial layer, in particular of silicon oxide, is deposited on a silicon substrate represented by a silicon wafer, the sacrificial layer being patterned. Onto the sacrificial layer, a second layer, in particular of polysilicon, is deposited and is likewise patterned. The sacrificial layer is removed in an etching operation by means of an etching medium which attacks the sacrificial layer but not the second layer, structures being formed as a result of which are free-standing above the silicon substrate at a distance equal to the thickness of the removed sacrificial layer and are anchored at certain sites on the silicon substrate. According to the invention, for the purpose of etching and exposing, the micromechanical structures are exposed to the vapor phase of a mixture of anhydrous hydrofluoric acid and water in a vapor-phase etching process. This makes it possible to dispense with laborious rinsing operations and sublimation operations.