Optical corrective techniques with reticle formation and reticle stitching to provide design flexibility

Method and apparatus for forming large scale fields suitable for use in the fabrication of integrated circuit structures having submicron dimensions. The method includes subdividing the large scale field into a plurality of subfields along the boundaries of functional components forming a very large...

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Hauptverfasser: SCHINELLA, RICHARD, CHAO, KEITH
Format: Patent
Sprache:eng
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Zusammenfassung:Method and apparatus for forming large scale fields suitable for use in the fabrication of integrated circuit structures having submicron dimensions. The method includes subdividing the large scale field into a plurality of subfields along the boundaries of functional components forming a very large scale integrated circuit. Stitching the subfields into the large scale field is then substantially simplified since the number and dimensions of conductive interconnects between the functional components can be more easily accommodated. The large scale field further includes a custom portion and a standard portion of functional components. Reticle formation of the standard portion involves optical correction techniques. Reticle formation of the custom portion may involve standard reticle formation techniques.