Full frame solid-state image sensor with altered accumulation potential and method for forming same

In accordance with the invention, a full frame solid-state image sensor of altered accumulation potential comprises a substrate that includes a semiconductor of one conductivity type and has a surface at which is situated a photodetector that comprises a first storage area and a second storage area. The first and second storage areas each comprise a CCD channel of conductivity type opposite to the conductivity type of the semiconductor. A first barrier region separates the first storage area from the second storage area, and a second barrier region separates the second storage area from an adjacent photodetector; the second barrier region is shallower than the first barrier region. Adjacent to one side of the photodetector is a channel stop of the same conductivity type as the semiconductor. A first gate and a second gate each comprising a conductive layer overlie the CCD channel, and positioned between the channel and the conductive layer is an O-N-O dielectric that comprises a first silicon dioxide layer and a second silicon dioxide layer and a silicon nitride layer interposed between the silicon dioxide layers. The silicon nitride layer comprises a trapped electric charge sufficient to alter the accumulation potential by 3 to 4 volts; the trapped electric charge is injected into the silicon nitride layer by applying a stress potential to the first and second gates. Also in accordance with the invention, the silicon nitride layer may be heated simultaneously with the application of the stress potential to the gates.