Method of fabricating semiconductor devices and the devices

A method of fabricating a semiconductor device including forming a Schottky contact on the surface of a substrate by patterning a layer of nickel to define a contact and annealing the nickel below approximately 600 DEG C. A trench is etched around the Schottky contact utilizing the Schottky contact as an etch mask and inert ions are implanted in the trench to form a damage region. The trench is passivated with a dielectric layer. An ohmic contact can be formed on the reverse side of the substrate prior to formation of the Schottky contact.