Densification in an intermetal dielectric film

An improved anneal process is disclosed for use in the preparation of a dielectric layer, especially an intermetal dielectric layer. An oxide layer is deposited using a H2O-TEOS PECVD process. A vacuum bake is used to minimize or eliminate volatile water, hydrogen, and hydrocarbon impurities in the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KOENIGSEDER, SIGMUND A, FUJISHIRO, FELIX, LEE, CHANG-OU, VINES, LANDON B, CAIN, JOHN L
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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