Densification in an intermetal dielectric film

Densification in an intermetal dielectric film

An improved anneal process is disclosed for use in the preparation of a dielectric layer, especially an intermetal dielectric layer. An oxide layer is deposited using a H2O-TEOS PECVD process. A vacuum bake is used to minimize or eliminate volatile water, hydrogen, and hydrocarbon impurities in the...

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Bibliographische Detailangaben
Hauptverfasser: KOENIGSEDER, SIGMUND A, FUJISHIRO, FELIX, LEE, CHANG-OU, VINES, LANDON B, CAIN, JOHN L
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An improved anneal process is disclosed for use in the preparation of a dielectric layer, especially an intermetal dielectric layer. An oxide layer is deposited using a H2O-TEOS PECVD process. A vacuum bake is used to minimize or eliminate volatile water, hydrogen, and hydrocarbon impurities in the dielectric layer. An oxidation anneal is then performed to scavenge any remaining undesirable species, and to provide for densification of the dielectric layer.