Semiconductor power module and power conversion device

A semiconductor power module which provides reliable overvoltage protection including an overvoltage protection device which functions so that when an overcurrent flows to an IGBT (1), a sink transistor (10) turns on and the IGBT (1) turns off accordingly. As the IGBT (1) turns off to cut off the ov...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TANAKA, TAKESHI, GOURAB, MAJUMDAR, HIRAMOTO, TAKAHIRO
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor power module which provides reliable overvoltage protection including an overvoltage protection device which functions so that when an overcurrent flows to an IGBT (1), a sink transistor (10) turns on and the IGBT (1) turns off accordingly. As the IGBT (1) turns off to cut off the overcurrent, a high surge voltage is applied to the IGBT (1). At this time, however, a clamp current flows trough a clamping circuit including a Zener diode (6), a diode (7) and a resistance (8) and part of it is divided to a transistor (Q11), so that a transistor (Q12) turns on and the sink transistor (10) turns off as the result. Accordingly, the clamp current increases a gate voltage of the IGBT (1). Hence, large part of the load current flows in the IGBT (1), and only a little flows to the clamping circuit. Accordingly, overheat of and damage by burning to the clamping circuit will not be caused even if both the overcurrent and overvoltage are applied.