Method for manufacturing lattice-matched substrates for high-Tc superconductor films

This method for manufacturing lattice-matched substrates for high-Tc superconductors employs at least two materials chosen from the group of known suitable substrate materials, of which one has a lattice constant smaller than the lattice constant(s) of the perovskite subcell of the selected supercon...

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Bibliographische Detailangaben
Hauptverfasser:	MUELLER, CARL A, SCHLOM, DARRELL G, MANNHART, JOCHEN D, BEDNORZ, JOHANNES G
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	This method for manufacturing lattice-matched substrates for high-Tc superconductors employs at least two materials chosen from the group of known suitable substrate materials, of which one has a lattice constant smaller than the lattice constant(s) of the perovskite subcell of the selected superconductor material, while the other one has a lattice constant greater than the lattice constant of the perovskite subcell of the selected superconductor. These materials are then powdered and mixed intimately for providing a single-crystal either from the molten mixture of the chosen materials or by thin film deposition, said single-crystal containing appropriate molar percentages of the chosen materials so that resulting lattice constant is essentially the same as that of the selected superconductor material.