Semiconductor trench capacitor cell having a buried strap
A semiconductor trench capacitor structure having a first level aligned isolation structure and buried strap that extends from within the trench into the doped semiconductor substrate. The semiconductor trench capacitor structure may be fabricated by forming a shallow trench within the trench capaci...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor trench capacitor structure having a first level aligned isolation structure and buried strap that extends from within the trench into the doped semiconductor substrate. The semiconductor trench capacitor structure may be fabricated by forming a shallow trench within the trench capacitor and semiconductor substrate, depositing a layer of conductive material within the shallow trench, using a mask to define and recess the strap and depositing insulating material within the shallow trench. |
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