Method for enhancing aluminum nitride

A method for enhancing aluminum nitride includes, in one version, annealing sputtered aluminum nitride in a reducing atmosphere (11), and subsequently annealing the sputtered aluminum nitride in an inert atmosphere (12). A superior aluminum nitride thin film (13) results. The films can withstand exp...

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Bibliographische Detailangaben
Hauptverfasser:	EVANS, KEENAN L, LIN, JONG-KAI, LIAW, HANG M
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRONIC CIRCUITRY CEMENTS CERAMICS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS THEREOF CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY LIME, MAGNESIA METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL REFRACTORIES RESONATORS SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	A method for enhancing aluminum nitride includes, in one version, annealing sputtered aluminum nitride in a reducing atmosphere (11), and subsequently annealing the sputtered aluminum nitride in an inert atmosphere (12). A superior aluminum nitride thin film (13) results. The films can withstand exposure to boiling water for times up to twenty minutes and maintain a refractive index, Nf, greater than 2.0, and a preferred crystalline orientation ratio, I(002)/I(102), in excess of 1000.