Optical storage medium utilizing electron trapping film layers sandwiched with electrodes

A three-dimensional optical memory based on stacked thin film electron trapping layers. Each thin film electron trapping layer is sandwiched between pairs of insulating layers and transparent electrodes. When an electric field is applied across the electron trapping layer via the electrodes, the electron trapping process is enhanced. In this way, electrical page addressing can be achieved for writing data to the memory. The data are read out by an IR light directed into the electron trapping film from the edge, again preferably with the application of an electric field across the addressed layer to enhance readout. The application of an electric field across an addressed layer during the writing and reading steps effectively eliminates inter-page crosstalk.