Method and structure for improving patterning design for processing
A method of interactive feedback in semiconductor processing is provided which compensates for lithographic proximity effects, reactive ion etch loading effects, electromigration and stress due to layering.
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A method of interactive feedback in semiconductor processing is provided which compensates for lithographic proximity effects, reactive ion etch loading effects, electromigration and stress due to layering. |
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