Method and structure for improving patterning design for processing

A method of interactive feedback in semiconductor processing is provided which compensates for lithographic proximity effects, reactive ion etch loading effects, electromigration and stress due to layering.

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Bibliographische Detailangaben
Hauptverfasser: WANG, CHI-HUNG, TRIPATHI, PRABHAKAR P, WHITEFIELD, BRUCE
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method of interactive feedback in semiconductor processing is provided which compensates for lithographic proximity effects, reactive ion etch loading effects, electromigration and stress due to layering.