Process for making OHMIC contacts and photovoltaic cell with ohmic contact

PCT No. PCT/GB92/02052 Sec. 371 Date Mar. 16, 1994 Sec. 102(e) Date Mar. 16, 1994 PCT Filed Nov. 6, 1992 PCT Pub. No. WO93/09568 PCT Pub. Date May 13, 1993.Ohmic contacts to p-type IIB/VIB semiconductor are obtained by a process which includes the step of depositing a viscous liquid containing a Gro...

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Hauptverfasser: OZSAN, MEHMET E, PATTERSON, MICHAEL H, JOHNSON, DANIEL R, OKTIK, SENER
Format: Patent
Sprache:eng
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Zusammenfassung:PCT No. PCT/GB92/02052 Sec. 371 Date Mar. 16, 1994 Sec. 102(e) Date Mar. 16, 1994 PCT Filed Nov. 6, 1992 PCT Pub. No. WO93/09568 PCT Pub. Date May 13, 1993.Ohmic contacts to p-type IIB/VIB semiconductor are obtained by a process which includes the step of depositing a viscous liquid containing a Group IB metal salt on a surface of a semiconductor, substantially free of oxide groups, heating to form a dried layer, removing the dried layer, washing the surface to remove residual by-products and drying the surface.