Electrochemical etch-stop on n-type silicon by injecting holes from a shallow p-type layer

The invention generally includes a method of selectively etching a body of silicon material wherein a silicon wafer is used as a working electrode and having an n-type region and a relatively shallow p-type layer. The working electrode and a counterelectrode are placed in a liquid etchant. High volt...

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Bibliographische Detailangaben
Hauptverfasser:	WANG, SUE S
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The invention generally includes a method of selectively etching a body of silicon material wherein a silicon wafer is used as a working electrode and having an n-type region and a relatively shallow p-type layer. The working electrode and a counterelectrode are placed in a liquid etchant. High voltage pulses, greater than 2 V are applied between the working electrode and the counterelectrode so that holes from the p-type layer are injected into the n-type region and etching is stopped due to oxidation of the n-type region. The technique is useful in producing very thin n-type membranes.