Semiconductor device having retrograde well and diffusion-type well

A DRAM is formed on a silicon substrate having a retrograde well and a diffusion-type well. The retrograde well has an impurity concentration profile which is set in steps by a plurality of ion-implantations. The diffusion-type well has an impurity concentration profile which changes monotonously by...

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Bibliographische Detailangaben

Hauptverfasser:	ARIMA, HIDEAKI, OKUDAIRA, TOMONORI, OKUMURA, YOSHINORI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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