Method of fabricating semiconductor devices using an intermediate grinding step

In wafer processes, after at least one layer which constitutes a structural member of a functional semiconductor element is formed on a semiconductor wafer, a brittle, excessive deposition on an edge of the semiconductor wafer is removed by grinding or etching of the wafer edge until the underlying wafer is exposed. The removal of the excessive deposition on the wafer edge reduces dust generation caused from crack and peel-off of the excessive deposition on the wafer edge, even if the wafer edge contacts a jig, and the like. Thus, the reduction in dust generation improves production yields of highly integrated semiconductor devices.