Multifunctional semiconductor switching device having gate-controlled regenerative and non-regenerative conduction modes, and method of operating same

A semiconductor switching device having gate-controlled regenerative and non-regenerative conduction modes includes a P-N-P-N thyristor and a diverter region in a semiconductor substrate. Regenerative conduction can be initiated by electrically connecting the thyristor's cathode region and first base region in response to a first bias signal. Non-regenerative conduction can also be initiated by electrically connecting the thyristor's second base region to the diverter region in response to a second bias signal, after regenerative conduction has been initiated. Alternative, non-regenerative conduction can be initiated by electrically connecting the thyristor's second base region to the diverter region and then electrically connecting the thyristor's first base region to the cathode region. The ability to support both regenerative and non-regenerative modes of operation improves the gate-controlled turn-on and turn-off capability of the device and improves the device's I-V characteristics by providing current saturation and inhibiting sustained parasitic latch-up.