Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates

High quality silicon nitride thin films can be deposited by plasma CVD onto large area glass substrates at high deposition rates by adjusting the spacing between the gas inlet manifold and substrate, maintaining the temperature at about 300 DEG -350 DEG C., and a pressure of at least 0.8 Torr. Subse...

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Hauptverfasser:	ROBERTSON, ROBERT, MAYDAN, DAN, LOU, PAMELA, LAW, KAM S, LEE, ANGELA, KOLLRACK, MARC M
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GLASS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	High quality silicon nitride thin films can be deposited by plasma CVD onto large area glass substrates at high deposition rates by adjusting the spacing between the gas inlet manifold and substrate, maintaining the temperature at about 300 DEG -350 DEG C., and a pressure of at least 0.8 Torr. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single vacuum system.