High density TEOS-based film for intermetal dielectrics

A method of forming a device and the device itself that utilizes a high density plasma-enhanced TEOS-based intermetal dielectric is disclosed. The high density is accomplished though the use of higher RF power and higher oxygen flow rate so that the TEOS is more completely oxidized. The higher densi...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	GIRIDHAR, RAGUPATHY V, HUFF, BRETT, FREIBERGER, PHILIP, MOGHADAM, FARHAD K
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	GIRIDHAR RAGUPATHY V HUFF BRETT FREIBERGER PHILIP MOGHADAM FARHAD K
description	A method of forming a device and the device itself that utilizes a high density plasma-enhanced TEOS-based intermetal dielectric is disclosed. The high density is accomplished though the use of higher RF power and higher oxygen flow rate so that the TEOS is more completely oxidized. The higher density intermetal dielectric absorbs water from air slower than a standard intermetal dielectric film. This lower water absorbance reduces the amount of water in the device and reduces hot electron induced device degradation.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US5389581A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US5389581A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US5389581A3</originalsourceid><addsrcrecordid>eNrjZDD3yEzPUEhJzSvOLKlUCHH1D9ZNSixOTVFIy8zJVUjLL1LIzCtJLcpNLUnMUUjJTM1JTS4pykwu5mFgTUvMKU7lhdLcDPJuriHOHrqpBfnxqcUFicmpeakl8aHBpsYWlqYWho7GhFUAAOZTLOw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>High density TEOS-based film for intermetal dielectrics</title><source>esp@cenet</source><creator>GIRIDHAR; RAGUPATHY V ; HUFF; BRETT ; FREIBERGER; PHILIP ; MOGHADAM; FARHAD K</creator><creatorcontrib>GIRIDHAR; RAGUPATHY V ; HUFF; BRETT ; FREIBERGER; PHILIP ; MOGHADAM; FARHAD K</creatorcontrib><description>A method of forming a device and the device itself that utilizes a high density plasma-enhanced TEOS-based intermetal dielectric is disclosed. The high density is accomplished though the use of higher RF power and higher oxygen flow rate so that the TEOS is more completely oxidized. The higher density intermetal dielectric absorbs water from air slower than a standard intermetal dielectric film. This lower water absorbance reduces the amount of water in the device and reduces hot electron induced device degradation.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1995</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950214&DB=EPODOC&CC=US&NR=5389581A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950214&DB=EPODOC&CC=US&NR=5389581A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GIRIDHAR; RAGUPATHY V</creatorcontrib><creatorcontrib>HUFF; BRETT</creatorcontrib><creatorcontrib>FREIBERGER; PHILIP</creatorcontrib><creatorcontrib>MOGHADAM; FARHAD K</creatorcontrib><title>High density TEOS-based film for intermetal dielectrics</title><description>A method of forming a device and the device itself that utilizes a high density plasma-enhanced TEOS-based intermetal dielectric is disclosed. The high density is accomplished though the use of higher RF power and higher oxygen flow rate so that the TEOS is more completely oxidized. The higher density intermetal dielectric absorbs water from air slower than a standard intermetal dielectric film. This lower water absorbance reduces the amount of water in the device and reduces hot electron induced device degradation.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1995</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD3yEzPUEhJzSvOLKlUCHH1D9ZNSixOTVFIy8zJVUjLL1LIzCtJLcpNLUnMUUjJTM1JTS4pykwu5mFgTUvMKU7lhdLcDPJuriHOHrqpBfnxqcUFicmpeakl8aHBpsYWlqYWho7GhFUAAOZTLOw</recordid><startdate>19950214</startdate><enddate>19950214</enddate><creator>GIRIDHAR; RAGUPATHY V</creator><creator>HUFF; BRETT</creator><creator>FREIBERGER; PHILIP</creator><creator>MOGHADAM; FARHAD K</creator><scope>EVB</scope></search><sort><creationdate>19950214</creationdate><title>High density TEOS-based film for intermetal dielectrics</title><author>GIRIDHAR; RAGUPATHY V ; HUFF; BRETT ; FREIBERGER; PHILIP ; MOGHADAM; FARHAD K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US5389581A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1995</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>GIRIDHAR; RAGUPATHY V</creatorcontrib><creatorcontrib>HUFF; BRETT</creatorcontrib><creatorcontrib>FREIBERGER; PHILIP</creatorcontrib><creatorcontrib>MOGHADAM; FARHAD K</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GIRIDHAR; RAGUPATHY V</au><au>HUFF; BRETT</au><au>FREIBERGER; PHILIP</au><au>MOGHADAM; FARHAD K</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>High density TEOS-based film for intermetal dielectrics</title><date>1995-02-14</date><risdate>1995</risdate><abstract>A method of forming a device and the device itself that utilizes a high density plasma-enhanced TEOS-based intermetal dielectric is disclosed. The high density is accomplished though the use of higher RF power and higher oxygen flow rate so that the TEOS is more completely oxidized. The higher density intermetal dielectric absorbs water from air slower than a standard intermetal dielectric film. This lower water absorbance reduces the amount of water in the device and reduces hot electron induced device degradation.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_US5389581A
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	High density TEOS-based film for intermetal dielectrics
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T02%3A23%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=GIRIDHAR;%20RAGUPATHY%20V&rft.date=1995-02-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS5389581A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true