High density TEOS-based film for intermetal dielectrics

A method of forming a device and the device itself that utilizes a high density plasma-enhanced TEOS-based intermetal dielectric is disclosed. The high density is accomplished though the use of higher RF power and higher oxygen flow rate so that the TEOS is more completely oxidized. The higher density intermetal dielectric absorbs water from air slower than a standard intermetal dielectric film. This lower water absorbance reduces the amount of water in the device and reduces hot electron induced device degradation.