Process for producing storage-stable silicon wafer surfaces having advantageous oxidation properties and silicon wafer fored thereby

Process for producing storage-stable silicon wafer surfaces having advantageous oxidation properties and silicon wafer fored thereby

A process for producing silicon wafers which have a storage-stable surface and which can be thermally oxidized directly, that is to say, without a prior HF immersion bath, and without the addition of halogen-containing gases, it being possible to achieve an equal or better oxidation result than that...

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Bibliographische Detailangaben
Hauptverfasser: GRAEF, DIETER, BAUER-MAYER, SUSANNE, FABRY, LASZLO, GRUNDNER, MANFRED, JOHN, PETER
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A process for producing silicon wafers which have a storage-stable surface and which can be thermally oxidized directly, that is to say, without a prior HF immersion bath, and without the addition of halogen-containing gases, it being possible to achieve an equal or better oxidation result than that achieved by including these measures.