Graded bandgap semiconductor device for real-time imaging

Spectral shift between different wavelength spectra by restricted narrow bandgap absorption of incident radiation at one location on a semiconductor body, under electrical bias causing release of radiation at another emission location as a result of radiative electron-hole recombination. The semicon...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	MATHUR, VEERENDRA K
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Spectral shift between different wavelength spectra by restricted narrow bandgap absorption of incident radiation at one location on a semiconductor body, under electrical bias causing release of radiation at another emission location as a result of radiative electron-hole recombination. The semiconductor body is a graded bandgap establishing composition of two selected compounds alloyed to a variable, position-dependent degree between the respective radiation and emission locations at which the respective narrow and wide bandgap properties of the compounds prevail.