Structure and fabrication of SiCr microfuses

Structure and fabrication of SiCr microfuses

A SiCr microfuse, deletable either by electrical voltage pulses or by laser pulses, for rerouting the various components in an integrated circuit, as where redundancy in array structures is implemented, and the method of fabricating same, at any wiring level of the chip, by utilizing a direct resist...

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Bibliographische Detailangaben
Hauptverfasser: ZIELINSKI, ROBERT W, FITZSIMMONS, JOHN A, FLITSCH, RICHARD, CARRUTHERS, ROY A, JUBINSKY, JAMES A, SCHWARTZ, GERALDINE C, DORLEANS, FERNAND J, TSANG, PAUL J, LARSEN, GERALD R
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A SiCr microfuse, deletable either by electrical voltage pulses or by laser pulses, for rerouting the various components in an integrated circuit, as where redundancy in array structures is implemented, and the method of fabricating same, at any wiring level of the chip, by utilizing a direct resist masking of the SiCr fuse layer to eliminate problems of mask damage and residual metal adjacent the fuse.