Method for manufacturing polycrystalline silicon thin-film solar cells

The present invention provides an improved method for manufacturing highly efficient and especially thin polycrystalline silicon thin-film solar cells. More particularly, the present invention provides a silicon nucleation layer produced on amorphous substrates with a nucleation layer being selectiv...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	ENDROES, ARTHUR, PLAETTNER, ROLF, EINZINGER, RICHARD, KRUEHLER, WOLFGANG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The present invention provides an improved method for manufacturing highly efficient and especially thin polycrystalline silicon thin-film solar cells. More particularly, the present invention provides a silicon nucleation layer produced on amorphous substrates with a nucleation layer being selectively etched until uniformly orientated nuclei remain. A silicon thin-film grown thereover is coarse-crystalline, has grain boundaries residing perpendicular to the substrate and has a pyramid structure as a consequence of the uniform orientation. High photocurrents can already be achieved with solar cells manufactured therefrom beginning with a layer thickness of 10 mu m.