Magnetoresistance effect type head having a damage immune film structure

A magnetoresistance effect type head including a ceramic substrate, a first magnetic film provided on the ceramic substrate, a second magnetic film provided above the first magnetic film, first and second insulating films provided between the first and second magnetic films, a magnetoresistance effect type film provided between the first and second insulating films, a bias film provided between the first and second insulating films in contact with the magnetoresistive film for applying magnetic field to the magnetoresistive film, a first conductive film provided between the first and second insulating films and above the bias film to be nearly as thick as the mean free path of free electrons, and a second conductive film of an electrode structure mutually separated between the first and second insulating films in contact with the first conductive film. The first conductive film is a nickel-chromium film or a chromium film which is resistive to a fluorocarbon-series gas to be used for etching. The second conductive film is made of a metal which is etched with a fluorocarbon-series gas and which has a thickness of 200 nm or more. The bias film and the magnetoresistance effect type film are protected from over-etching. The second conductive layer is made up of two metallic layers having contact tightness with the second insulating film and a third metallic layer which is sandwiched between the two metallic layers and which has a conductivity larger than the two metallic layers and also a thickness larger than the two metallic layers.