Emitter switched thyristor with buried dielectric layer

An emitter switched thyristor with buried dielectric layer includes a contiguous P-N-P-N series of semiconductor regions between an anode contact and cathode contact. These regions correspond to an anode region of second conductivity type, a first base region of first conductivity type, a second base region of second conductivity type on the first base region, and a floating emitter region contacting the second base region and forming a P-N junction therewith. In addition, a field effect transistor is also provided between the cathode contact and the floating emitter for controlling turn-on and turn-off. An insulating region is also provided between the cathode region and the second base region and prevents the formation of a parasitic thyristor between the cathode contact and the anode contact. The insulating region preferably includes a buried dielectric layer selected from the group consisting of SiO2, Si3N4, Al2O3 and MgAl2O4. The insulating region is preferably formed using SIMOX processing techniques.