Method for photo annealing non-single crystalline semiconductor films

Method for photo annealing non-single crystalline semiconductor films

An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-...

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Hauptverfasser: INUJIMA, TAKASHI, SUSUKIDA, MASATO, ABE, MASAYOSHI, KOBAYASHI, IPPEI, SUZUKI, KUNIO, SHIBATA, KATSUHIKO, FUKADA, TAKESHI, YAMAZAKI, SHUNPEI, NAGAYAMA, SUSUMU, KOYANAGI, KAORU, KINKA, MIKIO
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator INUJIMA
TAKASHI
SUSUKIDA
MASATO
ABE
MASAYOSHI
KOBAYASHI
IPPEI
SUZUKI
KUNIO
SHIBATA
KATSUHIKO
FUKADA
TAKESHI
YAMAZAKI
SHUNPEI
NAGAYAMA
SUSUMU
KOYANAGI
KAORU
KINKA
MIKIO
description An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.
format Patent
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for photo annealing non-single crystalline semiconductor films
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