Method for photo annealing non-single crystalline semiconductor films

Method for photo annealing non-single crystalline semiconductor films

An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: INUJIMA, TAKASHI, SUSUKIDA, MASATO, ABE, MASAYOSHI, KOBAYASHI, IPPEI, SUZUKI, KUNIO, SHIBATA, KATSUHIKO, FUKADA, TAKESHI, YAMAZAKI, SHUNPEI, NAGAYAMA, SUSUMU, KOYANAGI, KAORU, KINKA, MIKIO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.