Semiconductor laser amplifiers

PCT No. PCT/GB90/00055 Sec. 371 Date Aug. 1, 1991 Sec. 102(e) Date Aug. 1, 1991 PCT Filed Jan. 15, 1990 PCT Pub. No. WO90/08411 PCT Pub. Date Jul. 26, 1990.A semiconductor laser amplifier includes both a waveguide layer and an active layer. In use, an optical wave in the active layer interacts with...

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Hauptverfasser:	COOPER, DAVID M, SPURDENS, PAUL C, COLE, SIMON, DEVLIN, WILLIAM J, ISAAC, JOSEPH J, LEALMAN, IAN F
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DEVICES USING STIMULATED EMISSION ELECTRIC COMMUNICATION TECHNIQUE ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF TRANSMISSION
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Zusammenfassung:	PCT No. PCT/GB90/00055 Sec. 371 Date Aug. 1, 1991 Sec. 102(e) Date Aug. 1, 1991 PCT Filed Jan. 15, 1990 PCT Pub. No. WO90/08411 PCT Pub. Date Jul. 26, 1990.A semiconductor laser amplifier includes both a waveguide layer and an active layer. In use, an optical wave in the active layer interacts with the waveguiding layer to reduce the polarisation sensitivity of the amplifier. A short, thick active layer is not required, typical dimensions being 250 or 500 (my)m long, by 0.2 (my)m high. The mesa is typically about 2 (my)m wide, but may be wider.