Process for stabilizing spent silicon contact mass

Process for stabilizing spent silicon contact mass

A method is provided for passivating spent silicon contact mass by treating the spent silicon contact mass at a temperature in range of from 900 DEG C. to 1500 DEG C. in an inert atmosphere.

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Bibliographische Detailangaben
Hauptverfasser: NEELY, JOHN D, WEBB, STEVEN W, RITZER, ALAN
Format: Patent
Sprache:eng
Schlagworte:
ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM
CHEMISTRY
METALLURGY
ORGANIC CHEMISTRY
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Beschreibung
Zusammenfassung:A method is provided for passivating spent silicon contact mass by treating the spent silicon contact mass at a temperature in range of from 900 DEG C. to 1500 DEG C. in an inert atmosphere.