Sensor

A sensor for measuring pressure and acceleration is proposed; it has a monocrystalline silicon substrate (10) with a succession of thin films applied to its first primary surface. A deflectable membrane (12) in a frame (11) is structured out of the silicon substrate (10), and the membrane (12) is fo...

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Bibliographische Detailangaben
Hauptverfasser:	BANTIEN, FRANK
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS SEMICONDUCTOR DEVICES TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	A sensor for measuring pressure and acceleration is proposed; it has a monocrystalline silicon substrate (10) with a succession of thin films applied to its first primary surface. A deflectable membrane (12) in a frame (11) is structured out of the silicon substrate (10), and the membrane (12) is formed in the first primary surface. The membrane (12) has a reinforcement zone. In the succession of thin films that is applied to the first primary surface, there is a structure (50) having at least one first substructure, which is disposed parallel to the first primary surface of the silicon substrate (10). There is a gap between the first substructure and the silicon substrate (10). The first substructure is joined to the membrane (12) in the region of the reinforcement zone. It protrudes past the membrane (12) and extends at least partway over the frame (11). This first substructure forms one electrode of a capacitor. At least one first counterelectrode (161, 162) of the capacitor is disposed opposite the first substructure, in the region of the frame (11).