Thin film transistor with an increased switching rate

A thin film transistor arranged in a matrix array with a strip type gate address line and a source signal line, comprising: an insulating layer formed on the gate address line; a semiconductor layer formed on the insulating layer, which serves as a channel conductive layer; the source signal line fo...

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Bibliographische Detailangaben
Hauptverfasser:	SOHN, JEONGHA, BAE, BYUNGSEONG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	A thin film transistor arranged in a matrix array with a strip type gate address line and a source signal line, comprising: an insulating layer formed on the gate address line; a semiconductor layer formed on the insulating layer, which serves as a channel conductive layer; the source signal line formed passing by one side of the channel layer; a first drain electrode arranged in parallel with, and spaced from, said source signal line; and at least one pixel electrode connected to any one side of the drain electrode.