Deposition method for high aspect ratio features using photoablation

A method for providing superior fill of features in semiconductor processing utilizes a laser ablation system. Deposition is obtained by ablating target materials which are driven off perpendicular to the target in the direction of the deposition surface. The method provides complete fill of high as...

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Bibliographische Detailangaben
Hauptverfasser: PERRY, KATHLEEN A, BROWN, KAREN H, SUGERMAN, ALVIN, SRINIVASAN, RANGASWAMY, BRAREN, BODIL E
Format: Patent
Sprache:eng
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Zusammenfassung:A method for providing superior fill of features in semiconductor processing utilizes a laser ablation system. Deposition is obtained by ablating target materials which are driven off perpendicular to the target in the direction of the deposition surface. The method provides complete fill of high aspect ratio features with nominal heating of the substrate. Alloys and graded layers, as well as pure metals, can be deposited in low temperature patterned layers. In addition, the system has been used to achieve superior trench filling for isolation structures.