Process for manufacturing an ohmic electrode for n-type cubic boron nitride

An ohmic electrode for n-type cubic boron nitride is disclosed. The electrode is made of two thin films; and the first is at least one alloy material selected from a group consisting of Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy, and the second is at least one metallic material selected from a group consisting of Ni, Cr, Mo and Pt. A process for producing an ohmic electrode for n-type cBN is disclosed. The process is comprised of the following steps: providing a thin film of at least one alloy selected from Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy, the weight ratio of Si and Ge being from 0.1 to 35% by weight, on n-type cBN; providing a thin film of at least one metal selected from Ni, Cr, Mo and Pt on the thin alloy film; and subjecting the type cBN having the films thus provided to a heat-treatment process in an inert gas or in a vacuum at a temperature ranging from 350 DEG C. to 600 DEG C.