Method for the preparation of epitaxial ferromagnetic manganese aluminum magnetic memory element

Method for the preparation of epitaxial ferromagnetic manganese aluminum magnetic memory element

A non-volatile memory element based upon a thin epitaxial film of manganese aluminum upon a III-V semiconductor is described. The film is stable at elevated temperatures required for III-V semiconductor device processing, so permitting the monolithic integration of non-volatile memory elements with...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ALLEN, JR., SILAS J, LEADBEATER, MARK L, HARBISON, JAMES P, SANDS, TIMOTHY D, RAMESH, RAMAMOORTHY
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
MAGNETS
METALLURGY
PHYSICS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
STATIC STORES
TRANSFORMERS
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A non-volatile memory element based upon a thin epitaxial film of manganese aluminum upon a III-V semiconductor is described. The film is stable at elevated temperatures required for III-V semiconductor device processing, so permitting the monolithic integration of non-volatile memory elements with III-V semiconductor electronic and photonic devices.