MOCVD of indium oxide and indium/tin oxide films on substrates

Disclosed is a metalorganic chemical vapor deposition (MOCVD) process of depositing an indium oxide or an indium/tin oxide film on a substrate using indium alkyl etherate or indium alkyl etherate and organotin compound precursors, respectively.

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Bibliographische Detailangaben
Hauptverfasser:	MELAS, ANDREAS A
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Disclosed is a metalorganic chemical vapor deposition (MOCVD) process of depositing an indium oxide or an indium/tin oxide film on a substrate using indium alkyl etherate or indium alkyl etherate and organotin compound precursors, respectively.