Diamond growth method

Diamond growth method

Preferred embodiments grow a first diamondlike film (114) on a silicon substrate (102). Diamond film (116) is then grown on diamondlike film (114), the diamondlike film (114) providing a high density of nucleation sites (108) for the diamond film (116). Diamond film growth is interrupted and a secon...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: PURDES, ANDREW J
Format: Patent
Sprache:eng
Schlagworte:
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:Preferred embodiments grow a first diamondlike film (114) on a silicon substrate (102). Diamond film (116) is then grown on diamondlike film (114), the diamondlike film (114) providing a high density of nucleation sites (108) for the diamond film (116). Diamond film growth is interrupted and a second diamondlike film (134) is grown to provide a second region of nucleation sites (128). Second diamond film (126) is grown from nucleation sites (128), resulting in a relatively thick diamond film (140) with relatively small crystal grains.