Thin coatings for use in semiconductor integrated circuits and processes as antireflection coatings consisting of tungsten silicide

An antireflection coating (21) for use in integrated circuit processing consists of a film of tungsten silicide (WSi0.45) or tungsten silicon nitride (WSiN). These coatings are preferably made by sputtering, with the tungsten silicon nitride coating being made by sputtering in a nitrogen-containing...

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Bibliographische Detailangaben
Hauptverfasser:	HELMS, JR., AUBREY L, BRADY, MICHAEL F
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	An antireflection coating (21) for use in integrated circuit processing consists of a film of tungsten silicide (WSi0.45) or tungsten silicon nitride (WSiN). These coatings are preferably made by sputtering, with the tungsten silicon nitride coating being made by sputtering in a nitrogen-containing atmosphere.