Semiconductor device having improved element arrangement strong against external surge voltage

A semiconductor device having a high density structure and resistant against external abnormal electric charges is disclosd. The semiconductor device comprises an input diffusion resistor coupled to an external terminal and formed in a semiconductor substrate, a diffusion region formed in the semiconductor substrate and a voltage wiring having a contact portion connected to the diffusion region through at least one contact hole formed in an insulating layer covering the diffusion region. A first distance between a first end of the diffusion region close to the diffusion resistor and a first part of the contact portion nearest to the first end is made larger than a distance between a second end opposite to the first end of the diffusion region and a second part of the contact portion nearest to the second end.