Semiconductor device
A semiconductor of the present invention comprises first and second power MOS transistors of the same channel type, which are formed on the same semiconductor chip in a common drain, and means for supplying a control signal to each gate of these transistors. According to the above-mentioned structur...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor of the present invention comprises first and second power MOS transistors of the same channel type, which are formed on the same semiconductor chip in a common drain, and means for supplying a control signal to each gate of these transistors. According to the above-mentioned structure, formation of one chip can be obtained by use of a common drain, thereby obtaining a switch member having high integration and high reliance. |
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