Resist stripping

A positive photoresist stripper composition includes a solvent system having solubility parameters which fall within a range from about 8.5 to about 15 in an amount which falls within a range from about 65% to about 98%. An amine is present in an amount which falls within a range from about 2% to ab...

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Bibliographische Detailangaben
Hauptverfasser:	HAQ, NOOR U, LIN, WEI-YUAN, CHEN, DALTON
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	A positive photoresist stripper composition includes a solvent system having solubility parameters which fall within a range from about 8.5 to about 15 in an amount which falls within a range from about 65% to about 98%. An amine is present in an amount which falls within a range from about 2% to about 25%. A fatty acid having 8 to 20 carbon atoms is present in an amount which falls within a range from about 0.1% to about 10% (all percents being by weight). The amount of the amine and of the fatty acid are selected to provide a pH which falls in a range from about 6 to about 9.5. Positive photoresist is stripped from a substrate by immersing the substrate in the aforementioned composition. Metal deposited on the substrate is not attached by the composition.