Silicon wafer with defined interstitial oxygen concentration

The ratio between variations in the oxygen concentration before and after a silicon wafer is subjected to two types of heat treatments in which the temperatures and processing times are different is defined. The silicon wafer is subjected to a first heat treatment, and the interstitial oxygen concen...

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Bibliographische Detailangaben
Hauptverfasser:	OGINO, MASANOBU, AMAI, TSUTOMU
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The ratio between variations in the oxygen concentration before and after a silicon wafer is subjected to two types of heat treatments in which the temperatures and processing times are different is defined. The silicon wafer is subjected to a first heat treatment, and the interstitial oxygen concentrations before and after the first heat treatment are respectively set to [Oi]1ini and [Oi]1af. The silicon wafer is successively subjected to second and third heat treatments, and the interstitial oxygen concentrations before and after the second and third heat treatments are respectively set to [Oi]2ini and [Oi]2af. At this time, the interstitial oxygen concentrations [Oi]1ini, [Oi]1af, [Oi]2ini and [Oi]2af are so set as to satisfy the condition that ([Oi]2ini-[Oi]2af)/[Oi]1ini-[Oi]1af)>/=20.