Metal bump for a thermal compression bond and method for making same

A method for making a structure for bonding to a conductive pad on a semiconductor substrate is described. The structure comprises a glassy passivating layer with a thickness of at least 3 microns deposited over the conductive pad. The passivating layer defines an aperture which exposes a portion of...

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Bibliographische Detailangaben
Hauptverfasser: BERNDLMAIER, ERICH, VIAU, THOMAS L, DAS, GOBINDA
Format: Patent
Sprache:eng
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Zusammenfassung:A method for making a structure for bonding to a conductive pad on a semiconductor substrate is described. The structure comprises a glassy passivating layer with a thickness of at least 3 microns deposited over the conductive pad. The passivating layer defines an aperture which exposes a portion of the conductive pad. A metal bump covers the portion of the conductive pad exposed in the aperture and further extends over the edges of the glassy passivating layers so as to form a seal between the conductive pad and the glassy passivating layer. A subsequent thermal compression bonding operation on such structure does not cause fractures in the glassy passivating layer due to its thickness.