Process for the hydrophilizing and/or cement-residue-removing surface treatment of silicon wafers

Process for the hydrophilizing and/or cement-residue-removing surface treatment of silicon wafers

Silicon wafers can be provided with a hydrophilic surface and/or freed of adhering cement residues originating from the polishing operation with the aid of solutions adjusted to a pH of 8 to 14 with the aid of alkali-metal or alkaline-earth-metal compounds and containing hydrogen peroxide. These pro...

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Bibliographische Detailangaben
Hauptverfasser: BAUER-MAYER, SUSANNE, KIRSCHNER, HELMUT, BRUNNER, ROLAND, GRIESSHAMMER, RUDOLF
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CLEANING
CLEANING IN GENERAL
COMPOUNDS THEREOF
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PERFORMING OPERATIONS
PREVENTION OF FOULING IN GENERAL
SEMICONDUCTOR DEVICES
TRANSPORTING
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Beschreibung
Zusammenfassung:Silicon wafers can be provided with a hydrophilic surface and/or freed of adhering cement residues originating from the polishing operation with the aid of solutions adjusted to a pH of 8 to 14 with the aid of alkali-metal or alkaline-earth-metal compounds and containing hydrogen peroxide. These processes can even be carried out at room temperature and are remarkable for their low chemical consumption and easy manageability.