Light-controlled semiconductor component having a field effect transistor

A light-controllable semiconductor component includes a semiconductor body with an upper surface. A first zone of a first conductivity type is conterminous with the upper surface of the semiconductor body. A zone of a second conductivity type is embedded in the first zone and forms a gate zone of an enhancement FET. A zone of the first conductivity type is embedded in the gate zone of the enhancement FET and forms a source zone of the enhancement FET. A zone of the second conductivity type is embedded in the first zone and forms a light-sensitive region of a photosemiconductor component. The enhancement FET has a gate electrode electrically connected to the light-sensitive region. A further zone of the second conductivity type is embedded in the first zone. A depletion FET has a source zone, a drain zone and a gate zone embedded in the further zone. The depletion FET has a gate electrode electrically connected with the source zone of the depletion FET and with the source zone of the enhancement FET. The first zone forms a drain zone of the enhancement FET. A drain terminal is electrically connected to the drain zone of the enhancement FET and contacts the drain zone below the upper surface of the semiconductor body.