Method of manufacturing a semiconductor device utilizing a single polycrystalline layer for all electrodes

Disclosed is here a semicondutor integrated circuit device and a method of manufacturing the same in which bipolar transistors and MISFETs are formed on a semiconductor substrate. Emitter and base electrodes of the bipolar transistors and gate, source, and drain electrodes of the MISFETs are constit...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TANBA, NOBUO, IKEDA, TAKAHIDE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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