Method of manufacturing a semiconductor device utilizing a single polycrystalline layer for all electrodes

Method of manufacturing a semiconductor device utilizing a single polycrystalline layer for all electrodes

Disclosed is here a semicondutor integrated circuit device and a method of manufacturing the same in which bipolar transistors and MISFETs are formed on a semiconductor substrate. Emitter and base electrodes of the bipolar transistors and gate, source, and drain electrodes of the MISFETs are constit...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TANBA, NOBUO, IKEDA, TAKAHIDE
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Disclosed is here a semicondutor integrated circuit device and a method of manufacturing the same in which bipolar transistors and MISFETs are formed on a semiconductor substrate. Emitter and base electrodes of the bipolar transistors and gate, source, and drain electrodes of the MISFETs are constituted with the same polycrystalline layer, thereby realizing a high integration and a high-speed operation of a Bi-CMOS device.