Electrically-erasable and electrically-programmable memory storage devices with self aligned tunnel dielectric area and the method of fabricating thereof

The EEPROM has the selection device in series with the memory device having a floating gate disposed over the channel between the buried drain and the buried source, and insulated from the channel by 200 A to 1000 A of gate oxide, an add-on floating gate shorted electrically to the floating gate, and disposed over and insulated from the buried drain by 40 A to 150 A of tunnel dielectric, and a control gate disposed over and insulated from the floating gate. The improvement in the proposed version of the memory device in the EEPROM is that the tunnel dielectric area is very small and is self aligned to the floating gate.